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Depletion Mode MOSFET Devices

Our N-channel depletion mode field effect transistors (FET) utilize a proprietary third generation vertical DMOS process. The third generation process realizes world-class, high voltage MOSFET performance in an economical silicon gate process. The vertical DMOS process yields a robust device for high power applications with high input impedance. These highly reliable FET devices have been used extensively in IXYS Integrated Circuits Division's solid state relays for industrial and telecommunications applications.

Features:

• Device Normally On
• High Breakdown Voltage
• Low On-Resistance
• Low VGS (off) Voltage
• Low On-Resistance at Cold Temperatures
• High Input Impedance
• Low Input and Output Leakage
• Small Package Size: SOT-89 & SOT-223

Applications:
Picture of two FETs • Normally On Switches
• Ignition Modules
• Power Supplies
• Telecommunications
• Support for LITELINK Devices
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IXYS Integrated Circuits Division FETs

Click here for Reliability Reports for these devices

Part
Number
Data Sheet Revision BVDSX
(V)
RDS(on)
(Ohms)
VGS(off)
( Min V)
VGS(off)
(Max V)
IDSS
(Min mA)
Package Comments
CPC3701 4 60 1 -0.8 -2.9 600 SOT-89 Low RDS(on), High IDSS
CPC3703 7 250 4 -1.6 -3.9 300 SOT-89 Low RDS(on)
CPC3708 3 350 14 -2 -3.6 130 SOT-89, SOT-223 Low RDS(on)
CPC3710 2 250 10 -1.6 -3.9 220 SOT-89 -
CPC3714 2 350 14 -1.6 -3.9 240 SOT-89 High BVDSX
CPC3720 J 350 22 -1.6 -3.9 130 SOT-89 High BVDSX
CPC3730 K 350 30 -1.6 -3.9 140 SOT-89 High BVDSX
CPC5602 9 350 14 -2 -3.6 130 SOT-223 High BVDSX
CPC5603 7 415 14 -2 -3.6 130 SOT-223 High BVDSX

 

 
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