IX4351NE (Rev 1) Data Sheet
The IX4351NE is designed specifically to drive SiC MOSFETs and high power IGBTs. Separate 9A source and sink outputs allow for tailored turn-on and turn-off timing while minimizing switching losses. An internal negative charge regulator provides a selectable negative gate drive bias for improved dV/dt immunity and faster turn-off.
Desaturation detection circuitry detects an over current condition of the SiC MOSFET and initiates a soft turn off, thus preventing a potentially damaging dV/dt event. The logic input is TTL and CMOS compatible; this input does not need to be level shifted even with a negative gate drive bias voltage. Protection features include UVLO and thermal shutdown detection. An open drain FAULT output signals a fault condition to the microcontroller.
The IX4351NE is rated for operational temperature range of -40°C to +125°C,and is available in a thermally enhanced 16-pin power SOIC package.