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SiC MOSFET DRIVER
IX4351NE 9A Low Side SiC MOSFET & IGBT Driver
  • Separate 9A peak source and sink outputs
  • Operating Voltage Range: -10V to +25V
  • Internal negative charge pump regulator for selectable negative gate drive bias
  • Desaturation detection with soft shutdown sink driver
  • TTL and CMOS compatible input
  • Under Voltage lockout (UVLO)
  • Thermal shutdown
  • Open drain FAULT output
IX4351NE Image

IX4351NE (Rev 2) Data Sheet

IX4351 Evaluation Board | Rev. 20.02e Evaluation Board User's Guide

The IX4351NE is designed specifically to drive SiC MOSFETs and high power IGBTs. Separate 9A source and sink outputs allow for tailored turn-on and turn-off timing while minimizing switching losses. An internal negative charge regulator provides a selectable negative gate drive bias for improved dV/dt immunity and faster turn-off.

Desaturation detection circuitry detects an over current condition of the SiC MOSFET and initiates a soft turn off, thus preventing a potentially damaging dV/dt event. The logic input is TTL and CMOS compatible; this input does not need to be level shifted even with a negative gate drive bias voltage. Protection features include UVLO and thermal shutdown detection. An open drain FAULT output signals a fault condition to the microcontroller.

The IX4351NE is rated for operational temperature range of -40°C to +125°C,and is available in a thermally enhanced 16-pin power SOIC package.

 

IX4351NE Functional Block Diagram
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