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AUTOMOTIVE GRADE DEVICES

 

IX4351NEAU: 9A Low Side SiC MOSFET & IGBT Driver
IX4351NEAU image
  • AEC Q100 Qualified
  • Separate 9A peak source and sink outputs
  • Operating Voltage Range: -10V to +25V
  • Internal negative charge pump regulator for selectable negative gate drive bias
  • Desaturation detection with soft shutdown sink driver
  • TTL and CMOS compatible input
  • Undervoltage Lockout (UVLO)
  • Thermal Shutdown
  • Open drain FAULT output

The IX4351NEAU is AEC-Q100 Grade1 rated for an operational ambient temperature range of -40°C to +125°C, and is available in a thermally enhanced 16-pin narrow SOIC package.

IX4351NEAU (Data Sheet Rev 1)

The IX4351NEAU is an automotive grade, AEC-Q100 qualified gate driver, designed specifically to drive SiC MOSFETs and high power IGBTs. Separate 9A source and sink outputs allow for tailored turn-on and turn-off timing while minimizing switching losses. An internal negative charge regulator provides a selectable negative gate drive bias for improved dV/dt immunity and faster turn-off.

Desaturation detection circuitry senses an over current condition of the SiC MOSFET and initiates a soft turn off, thus preventing a potentially damaging dV/dt event. The non-inverting logic input, IN, is TTL and CMOS compatible; internal level shifters provide the necessary bias to accommodate negative gate drive bias voltages. Additional protection features include UVLO detection and thermal shutdown. An open drain FAULT output signals a fault condition to the microcontroller.

IX4351NEAU Functional Block Diagram
IX4340NE: Automotive Grade 5-Ampere, Dual Low-Side MOSFET Driver
IX4340NE-picture
  • AEC Q100 Qualified
  • Dual Drivers Source/Sink 5A Drive Current
  • Operating Voltage Range: 5V to 20V
  • AEC Q100 Grade 1: -40°C to +125°C Operating Temperature Range
  • AEC-Q100 Classification 3A +/-4kV ESD Rating (Human Body Model)
  • Independent Enable for each driver
  • Undervoltage Lockout Circuitry
  • Fast Rise and Fall Times (7ns typical)
  • Fast Propagation Delays (16ns typical)

These devices, offered in a thermally enhanced 8-pin SOIC package with an exposed metal back, are fully qualified for automotive use per requirements of AEC Q100.

IX4340NE (Data Sheet Rev 1)

The IX4340NE is an automotive grade, AEC-Q100 qualified dual, high current, low side gate driver. Each of the two outputs is capable of sourcing and sinking 5A of peak current, and has a maximum voltage rating of 20V. The two outputs can be paralleled for higher current applications. Fast propagation delay times (16ns typical) and fast rise and fall times (7ns) make the IX4340NE well suited for high frequency applications.

The inputs are TTL and CMOS logic compatible, and there is an independent Enable function for each output. Under voltage lockout circuitry (UVLO) prevents the high side source driver from conducting until there is sufficient supply voltage. The outputs are held low if the logic inputs are floating.

IX4340NE Pinout
IXD_604SI & IXD_604SIA: 4-Amp Dual Low-Side Ultrafast MOSFET Driver
IXDD604 Automotive Gate Driver
  • AEC Q100 Qualified
  • 4A Peak Source/Sink Drive Current
  • Wide Operating Voltage Range: 4.5V to 35V
  • AEC Q100 Grade 1: -40°C to +125°C Operating Temperature Range
  • Logic Input Withstands Negative Swing of up to 5V
  • Outputs May be Connected in Parallel for Higher Drive Current
  • Matched Rise and Fall Times
  • Low Propagation Delay Time
  • Low 10µA Supply Current
  • Low Output Impedance

These devices, offered in an 8-pin SOIC package and in an 8-pin Power SOIC package with an exposed metal back, are fully qualified for automotive use per requirements of AEC Q100.

IXD_604SI & SIA (Data Sheet Rev 4)

The IXDD604SI & SIA / IXDF604SI & SIA / IXDI604SI & SIA / IXDN604SI & SIA dual high-speed gate drivers are especially well suited for driving the latest IXYS MOSFETs and IGBTs. Each of the two outputs can source and sink 4A of peak current while producing voltage rise and fall times of less than 10ns. The input of each driver is virtually immune to latch up, and proprietary circuitry eliminates cross conduction and current “shoot-through.” Low propagation delay and fast, matched rise and fall times make these devices ideal for high-frequency and high-power applications.

The IXDD604SI&SIA are dual non-inverting drivers with enables; the IXDF604SI&SIA has one inverting driver and one non-inverting driver; the IXDI604SI&SIA are dual inverting drivers; and the IXDN604SI&SIA are dual non-inverting drivers.

IXD_604SI&SIA Packages
IXD_609SI: 9-Amp Low-Side Ultrafast MOSFET Driver
IXDD609 Automotive Gate Driver
  • AEC Q100 Qualified
  • 9A Peak Source/Sink Drive Current
  • Wide Operating Voltage Range: 4.5V to 35V
  • AEC Q100 Grade 1: -40°C to +125°C Operating Temperature Range
  • Logic Input Withstands Negative Swing of up to 5V
  • Matched Rise and Fall Times
  • Low Propagation Delay Time
  • Low 10µA Supply Current
  • Low Output Impedance

These devices, in an 8-pin Power SOIC package with an exposed metal back, are fully qualified for automotive use per requirements of AEC Q100.

IXD_609SI (Data Sheet Rev 2)

The IXDD609SI / IXDI609SI / IXDN609SI high-speed gate drivers are especially well suited for driving the latest IXYS MOSFETs and IGBTs. The IXD_609SI high-current output can source and sink 9A of peak current while producing voltage rise and fall times of less than 25ns. The input is CMOS compatible, and is virtually immune to latch up. Proprietary circuitry eliminates cross-conduction and current “shoot-through.” Low propagation delay and fast, matched rise and fall times make the IXD_609SI family ideal for high-frequency and high-power applications.

The IXDD609SI is configured as a non-inverting driver with an enable, the IXDI609SI is configured as an inverting driver, and the IXDN609SI is configured as a non-inverting driver.

IXD_609 Packages
IXD_614SI: 14-Amp Low-Side Ultrafast MOSFET Driver
IXDN614SI Picture
  • AEC Q100 Qualified
  • 14A Peak Source/Sink Drive Current
  • Wide Operating Voltage Range: 4.5V to 35V
  • AEC Q100 Grade 1: -40°C to +125°C Operating Temperature Range
  • Logic Input Withstands Negative Swing of up to 5V
  • Matched Rise and Fall Times
  • Low Propagation Delay Time
  • Low 10µA Supply Current
  • Low Output Impedance

These devices, in an 8-pin Power SOIC package with an exposed metal back, are fully qualified for automotive use per requirements of AEC Q100.

IXD_614SI (Data Sheet Rev 2)

The IXDD614SI / IXDI614SI / IXDN614SI high-speed gate drivers are especially well suited for driving the latest IXYS MOSFETs and IGBTs. The IXD_614SI high-current output can source and sink 14A of peak current while producing voltage rise and fall times of less than 35ns. The input is CMOS compatible, and is virtually immune to latch up. Proprietary circuitry eliminates cross-conduction and current “shoot-through.” Low propagation delay and fast, matched rise and fall times make the IXD_614SI family ideal for high-frequency and high-power applications.

The IXDD614SI is configured as a non-inverting driver with an enable, the IXDI614SI is configured as an inverting driver, and the IXDN614SI is configured as a non-inverting driver.

IXD_614SI Packages
 
 
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