Depletion Mode MOSFET Devices Our N-channel depletion mode field effect transistors (FET) utilize a proprietary third generation vertical DMOS process. The third generation process realizes world-class, high voltage MOSFET performance in an economical silicon gate process. The vertical DMOS process yields a robust device for high power applications with high input impedance. These highly reliable FET devices have been used extensively in IXYS Integrated Circuits Division's solid state relays for industrial and telecommunications applications. See AN-500, MOSFET Application Note. |
Features: |
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• Device Normally On |
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Applications: |
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• Normally On Switches • Ignition Modules • Power Supplies • Telecommunications • Support for LITELINK Devices |
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IXYS Integrated Circuits Division FETs
| Part Number |
Data Sheet Revision | V(BR)DSX (V) |
RDS(on) (Ohms) |
VGS(off) ( Min V) |
VGS(off) (Max V) |
IDSS (Min mA) |
Package | Comments |
|---|---|---|---|---|---|---|---|---|
| CPC3701 | 6 | 60 | 1 | -1.4 | -3.1 | 600 | SOT-89 | Low RDS(on), High IDSS |
| CPC3703 | 7 | 250 | 4 | -1.6 | -3.9 | 360 | SOT-89 | Low RDS(on) |
| CPC3708 | 4 | 350 | 14 | -2 | -3.6 | 130 | SOT-89, SOT-223 | Low RDS(on) |
| CPC3710 | 2 | 250 | 10 | -1.6 | -3.9 | 220 | SOT-89 | - |
| CPC3714 | 2 | 350 | 14 | -1.6 | -3.9 | 240 | SOT-89 | High V(BR)DSX |
| CPC3720 | 1 | 350 | 22 | -1.6 | -3.9 | 130 | SOT-89 | High V(BR)DSX |
| CPC3730 | 1 | 350 | 35 | -1.6 | -3.9 | 140 | SOT-89 | High V(BR)DSX |
| CPC3902 | 4 | 250 | 2.5 | -1.4 | -3.1 | 400 | SOT-223 | - |
| CPC3909 | 1 | 400 | 6 | -1.4 | -3.1 | 300 | SOT-89, SOT-223 | - |
| CPC3960 | 2 | 600 | 44 | -1.4 | -3.1 | 100 | SOT-223 | - |
| CPC3980 | 2 | 800 | 45 | -1.4 | -3.1 | 100 | SOT-223 | - |
| CPC3982 | 1 | 800 | 380 | -1.4 | -3.1 | 20 | SOT-23 | - |
| CPC5602 | 10 | 350 | 14 | -2 | -3.6 | 130 | SOT-223 | High V(BR)DSX |
| CPC5603 | 8 | 415 | 14 | -2 | -3.6 | 130 | SOT-223 | High V(BR)DSX |